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October 1997
FDC6320C
Dual N & P Channel , Digital FET
General Description
These dual N & P Channel logic level enhancement mode field
effec transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology. This very high density
process is especially tailored to minimize on-state resistance.
The device is an improved design especially for low voltage
applications as a replacement for bipolar digital transistors in
load switching applications. Since bias resistors are not
required, this dual digital FET can replace several digital
transistors with difference bias resistors.
Features
N-Ch 25 V, 0.22 A, R DS(ON) = 5 ? @ V GS = 2.7 V.
P-Ch 25 V, -0.12 A, R DS(ON) = 13 ? @ V GS = -2.7 V.
Very low level gate drive requirements allowing direct
operation in 3 V circuits. V GS(th) < 1.5 V.
Gate-Source Zener for ESD ruggedness.
>6kV Human Body Model
Replace NPN & PNP digital transistors.
SOT-23
SuperSOT TM -6
SuperSOT TM -8
SO-8
SOT-223
SOIC-16
4
5
6
3
2
1
Absolute Maximum Ratings
T A = 25 o C unless other wise noted
Symbol
V DSS , V CC
V GSS , V IN
Parameter
Drain-Source Voltage, Power Supply Voltage
Gate-Source Voltage,
N-Channel
25
8
P-Channel
-25
-8
Units
V
V
I D , I O
Drain/Output Current
- Continuous
0.22
-0.12
A
- Pulsed
0.5
-0.5
P D
Maximum Power Dissipation
(Note 1a)
0.9
W
(Note 1b)
0.7
T J ,T STG
ESD
Operating and Storage Tempature Ranger
Electrostatic Discharge Rating MIL-STD-883D
-55 to 150
6
°C
kV
Human Body Model (100pf / 1500 Ohm)
THERMAL CHARACTERISTICS
R θ JA
R θ J C
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
140
60
°C/W
°C/W
? 1997 Fairchild Semiconductor Corporation
FDC6320C.Rev C
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相关代理商/技术参数
FDC6320C 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET
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FDC6321C 功能描述:MOSFET SSOT-6 COMP N-P-CH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDC6321C 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL NP SUPERSOT-6
FDC6321C_Q 功能描述:MOSFET SSOT-6 COMP N-P-CH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDC6322 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Dual N & P Channel , Digital FET
FDC6322C 功能描述:MOSFET SSOT-6 COMP N-P-CH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDC6322C_Q 功能描述:MOSFET SSOT-6 COMP N-P-CH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube